We report ambipolar transport properties in black phosphorus using anelectric-double-layer transistor (EDLT) configuration. The transfer curveclearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3.The band gap was determined as = 0.35 eV from the transfer curve, andHall-effect measurements revealed that the hole mobility was ~ 190 cm^2/Vs at170 K, which is one order of magnitude larger than the electron mobility. Byinducing an ultra-high carrier density of ~ 10^14 cm^-2, anelectric-field-induced transition from the insulating state to the metallicstate was realized, due to both electron and hole doping. Our results suggestthat black phosphorus will be a good candidate for the fabrication offunctional devices, such as lateral p-n junctions and tunnel diodes, due to theintrinsic narrow band gap.
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机译：我们报告使用双电层晶体管（EDLT）配置在黑磷中的双极传输性质。传输曲线清楚地表现出双极性晶体管的行为，开-关比为5 * 10 ^ 3。根据传输曲线确定的带隙为= 0.35 eV，霍尔效应测量表明空穴迁移率约为190 cm ^ 2 / Vs为170 K，比电子迁移率大一个数量级。通过诱导〜10 ^ 14 cm ^ -2的超高载流子密度，由于电子和空穴掺杂，实现了电场诱导的从绝缘态到金属态的转变。我们的结果表明，由于固有的窄带隙，黑磷将是制造功能器件（如横向p-n结和隧道二极管）的良好候选者。
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